Amorphous silicon nitride deposited at 120 °C for organic light emitting display-thin film transistor arrays on plastic substrates

Abstract

Nitrogen-rich amorphous silicon nitride (a- SiN x : H ) films with [N]/[Si] ratios ranging from 1.4 to 1.7 were deposited by a 13.56 MHz plasma-enhanced chemical vapor deposition method at a temperature of 120 °C. The films’ composition, dielectric constant,electrical resistivity, and breakdown voltage were evaluated. The electrical properties of a- SiN x : H films with a [N]/[Si] ratio of more than 1.6 are superior to their lower N-content counterparts. Amorphous siliconthin film transistors(TFTs) that incorporate a- SiN x : H dielectrics were fabricated on glass and plastic substrates at a maximum processing temperature of 120 °C. The TFTs exhibit effective field effect mobility of 0.5–0.8 cm 2 / V s , an ON current of ∼10 −5 A , an ON/OFF ratio of more than 10 6 and a subthreshold slope of 0.5 V/dec. The performance of the transistors seems to be compatible with application of them in active–matrix organic light emitting displays.