A study of the silane glow discharge deposition by isotopic labelling
- 20 March 1981
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 77 (4), 287-300
- https://doi.org/10.1016/0040-6090(81)90320-5
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Glow discharge preparation of amorphous hydrogenated silicon from higher silanesApplied Physics Letters, 1980
- Silane dissociation mechanisms and thin film formation in a low pressure multipole dc dischargeApplied Physics Letters, 1980
- Ionic species in a silane plasmaApplied Physics Letters, 1980
- Mass spectrometry of a silane glow discharge during plasma deposition of a-Si: H filmsThin Solid Films, 1980
- Growth morphology and defects in plasma-deposited a-Si:H filmsJournal of Non-Crystalline Solids, 1980
- Reaction mechanisms of the radio frequency glow discharged deposition process in silane-heliumThin Solid Films, 1979
- The 147-nm photolysis of monosilaneJournal of the American Chemical Society, 1979
- Plasma etching A ’’pseudo-black-box’’ approachJournal of Applied Physics, 1977
- Zur Reaktion von Silylradikalen Das Verhältnis Disproportionierung/RekombinationBerichte der Bunsengesellschaft für physikalische Chemie, 1977
- The Preparation and Properties of Amorphous SiliconJournal of the Electrochemical Society, 1969