Stoichiometric effects in the growth of doped epitaxial layers of GaAs1-χPχ
- 1 March 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 8 (3), 259-268
- https://doi.org/10.1016/0022-0248(71)90067-4
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
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