Ohmic contacts to Si-implanted InP
- 31 March 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (3), 263-265
- https://doi.org/10.1016/0038-1101(81)90089-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Ion-Implanted n-Channel InP·IGFET and Its Low Frequency CharacteristicsJapanese Journal of Applied Physics, 1980
- Power gain and noise of InP and GaAs insulated gate microwave FETsSolid-State Electronics, 1979
- The dielectric and interfacial characteristics of MIS structures on InP and GaAsThin Solid Films, 1979
- Enhancement-mode ion-implanted InP f.e.t.sElectronics Letters, 1978
- InP Schottky-gate field-effect transistorsIEEE Transactions on Electron Devices, 1975
- Models for contacts to planar devicesSolid-State Electronics, 1972
- Contact Resistance and Contact ResistivityJournal of the Electrochemical Society, 1972