21% (one sun, air mass zero) 4 cm2 GaAs space solar cells
- 6 January 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (1), 74-75
- https://doi.org/10.1063/1.96766
Abstract
GaAs space solar cells with areas of 4 cm2 have been fabricated by metalorganic chemical vapor deposition. The AlGaAs‐GaAs heteroface structures have been grown in both the p‐n and n‐p configurations. Under one sun, air mass zero conditions and at 25 °C, the p‐n cell is characterized by a short‐circuit current density of 32.3 mA/cm2, an open‐circuit voltage of 1.05 V, and a fill factor of 0.84, resulting in a conversion efficiency of 21.1%. The corresponding values for n‐p cells are 33.8 mA/cm2, 1.01 V, and 0.83, resulting in a conversion efficiency of 21.0%.Keywords
This publication has 5 references indexed in Scilit:
- Computer modeling study of the effects of inhomogeneous doping and/or composition in GaAs solar-cell devicesJournal of Applied Physics, 1985
- 18.7% efficient (1-sun, AM0) large-area GaAs solar cellsApplied Physics Letters, 1985
- Magnesium doping of efficient GaAs and Ga0.75In0.25As solar cells grown by metalorganic chemical vapor depositionApplied Physics Letters, 1984
- High-efficiency GaAs solar cellsIEEE Transactions on Electron Devices, 1984
- The growth of Magnesium-doped GaAs by the Om-Vpe processJournal of Electronic Materials, 1983