Characteristics of Pb(Zr[sub 0.53]Ti[sub 0.47])O[sub 3] on Metal and Al[sub 2]O[sub 3]/Si Substrates

Abstract

We have fabricated Pb(Zr0.53Ti0.47)O3Pb(Zr0.53Ti0.47)O3 on Pt and Pb(Zr0.53Ti0.47)O3Pb(Zr0.53Ti0.47)O3 on 4 nm Al2O3/SiAl2O3/Si substrates. Although Pb(Zr0.53Ti0.47)O3Pb(Zr0.53Ti0.47)O3 on Pt has a larger dielectric constant and grain size than those on Al2O3/Si,Al2O3/Si, the Pb(Zr0.53Ti0.47)O3Pb(Zr0.53Ti0.47)O3 thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of ∼3.6 V. Moreover, the leakage current density of Pb(Zr0.53Ti0.47)O3Pb(Zr0.53Ti0.47)O3 on Al2O3/SiAl2O3/Si at −10 V is nearly three orders of magnitude lower than that of Pb(Zr0.53Ti0.47)O3Pb(Zr0.53Ti0.47)O3 on Pt. The comparable memory characteristics and the lower leakage current of Pb(Zr0.53Ti0.47)O3Pb(Zr0.53Ti0.47)O3 on Al2O3/SiAl2O3/Si are important for continuous scaling down the ferroelectric memory. © 2001 The Electrochemical Society. All rights reserved.