The sputtering of InP with 3 keV to 10 keV Ar- and O2-ions under various angles
- 1 March 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 13 (1-3), 374-376
- https://doi.org/10.1016/0168-583x(86)90531-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Surface morphology of Si(100), GaAs(100) and InP(100) following O2+ and Cs+ ion bombardmentVacuum, 1984
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- A penning type ion source with high efficiency and some applicationsRadiation Effects, 1982
- Reactive ion beam etching of InP with Cl2Applied Physics Letters, 1981
- Sputtered atom ejection patterns from GeRadiation Effects, 1970