Effect of gas-phase stoichiometry on the minority-carrier diffusion length in vapor-grown GaAs
- 1 August 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (3), 141-142
- https://doi.org/10.1063/1.89027
Abstract
The electron diffusion length in Zn‐doped (p ∼1×1019 cm−3) vapor‐grown GaAs has been found to depend strongly on the gas‐phase stoichiometry used during epitaxial deposition. Specifically, near‐stoichiometric or Ga‐rich flow conditions provide diffusion lengths as large as 4.8 μm; this is about a factor of two larger than that of VPE GaAs prepared under commonly used As‐rich flow conditions, and is comparable to that of LPE GaAs. Furthermore, the modified gas‐flow conditions provide reduced threshold current densities for a room‐temperature double‐heterojunction laser of GaAs/In0.5Ga0.5P.Keywords
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