Formation of metastable supersaturated solid solutions in ion implanted silicon during solid phase crystallization
- 1 August 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (3), 239-242
- https://doi.org/10.1063/1.93480
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge1−xSix alloys determined by scanning calorimetryJournal of Applied Physics, 1981
- Direct observation of laser-induced solid-phase epitaxial crystallization by time-resolved optical reflectivityApplied Physics Letters, 1980
- Incorporation of implanted In and Sb in silicon during amorphous layer regrowthJournal of Applied Physics, 1979
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978
- On the configurational entropy of amorphous Si and GePhilosophical Magazine, 1974
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960