ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3 gate insulators
- 22 May 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (21), 212903
- https://doi.org/10.1063/1.2204574
Abstract
The electrical characteristics of ZnOthin-film transistors with high- k ( Ba , Sr ) Ti O 3 gate dielectrics are presented. The ZnO and ( Ba , Sr ) Ti O 3 thin films were deposited on Pt, exhibiting polycrystalline characteristics. The thin-film devices demonstrated transistor behavior over the range of 0 – 10 V with a stable threshold voltage of approximately 1.2 V . The field effect mobility, subthreshold slope, and on/off ratio were measured to be 2.3 cm 2 V − 1 s − 1 , 0.25 V ∕ decade , and 1.5 × 10 8 , respectively. The measured transistor performance characteristics suggest that Zn O ∕ ( Ba , Sr ) Ti O 3 structures are well suited for both polycrystalline thin-film transistors for display applications and future higher performance transistors based on single crystal ZnO.Keywords
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