3C-SiC p-n junction diodes
- 2 June 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (22), 1536-1537
- https://doi.org/10.1063/1.96860
Abstract
3C‐SiC p‐n junction diodes are prepared on Si substrates by chemical vapor deposition growth with appropriate impurity doping, and their current‐voltage (I‐V) and capacitance‐voltage (C‐V) characteristics are studied. I‐V curves show good rectifying characteristics with a value of 3.3 for the ideal factor n and a reverse leakage current less than 10 μA at −5 V. The junction area is approximately 0.8 mm2. The built‐in voltage is around 1.4 V by C‐V measurements.Keywords
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