Capacitance discharge in VO2 threshold switching devices
- 15 June 1972
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 10 (12), 1277-1280
- https://doi.org/10.1016/0038-1098(72)90959-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Mechanism of negative resistance and filamentary conduction in thermal switching devicesPhysica Status Solidi (a), 1971
- Initiation of switching in VO2coplanar devicesIEEE Transactions on Electron Devices, 1971
- Filamentary Conduction in VO2 Coplanar Thin-Film DevicesApplied Physics Letters, 1971
- Vaporization associated with surface electrical switching in semiconducting AsTeI and AsTeGe glassesSolid State Communications, 1971
- Breakdown and Sustaining Mechanism in Amorphous Semiconducting Threshold SwitchesCanadian Journal of Physics, 1971
- Switching and breakdown in filmsThin Solid Films, 1971
- Non-ohmic properties of some amorphous semiconductorsJournal of Non-Crystalline Solids, 1970
- A thin-film inductance using thermal filamentsIEEE Transactions on Electron Devices, 1970
- THRESHOLD SWITCHING AND THERMAL FILAMENTS IN AMORPHOUS SEMICONDUCTORSApplied Physics Letters, 1970
- Phenomenology of switching and memory effects in semiconducting chalcogenide glassesJournal of Non-Crystalline Solids, 1970