Surface Study of Anodized Indium Antimonide

Abstract

The surface properties of the anodized oxide/InSb system have been studied using metal‐oxide‐semi‐conductor structures. It was found that the surface state charges are negative in general. This negative surface charge comes from the following two sources: the acceptor‐type surface state on the real InSb surface and the positively charged trap levels in the oxide. There is also evidence that two sets of trap levels exist in the oxide, with relaxation time as the characteristic difference. The Electron Microprobe Analyzer was employed in this investigation to evaluate the chemical composition in the oxide as well as in the surface layer of InSb. This was achieved by regulating the accelerating voltage to control the depth of electron penetration.