Interaction of Copper Atoms with Radiation Defects in Gallium Arsenide
- 16 February 1982
- journal article
- research article
- Published by Wiley in physica status solidi (a)
- Vol. 69 (2), 521-525
- https://doi.org/10.1002/pssa.2210690212
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Effect of Electron Irradiation on Recombination Characteristics of Deep Radiative Centres in GaAsphysica status solidi (a), 1982
- Luminescence studies of the 1.36-eV band and the edge emission in melt-grown GaAs : CuJournal of Applied Physics, 1979
- A coherent model for deep-level photoluminescence of cu-contaminated n-type gaas single crystalsJournal of Electronic Materials, 1978
- The characteristics of the copper-induced 1.35 eV emission band in p-GaAsphysica status solidi (a), 1975
- Temperature quenching of the copper-induced 1.35 eV emission band in p-GaAsphysica status solidi (a), 1974
- Effect of heat treatment on the 0.93, 1.0, and 1.28 ev luminescence bands in n-GaAsphysica status solidi (a), 1973
- Copper contamination during the vapour epitaxial growth of GaAsphysica status solidi (a), 1972