Photoluminescent properties of Er-doped In1−xGaxP prepared by metalorganic vapor phase epitaxy
- 28 October 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (18), 2317-2319
- https://doi.org/10.1063/1.106055
Abstract
Atmospheric pressure metalorganic vapor phase epitaxy has been used to prepare Er‐doped In1−xGaxP layers using an Er beta‐diketonate precursor as the dopant source. Temperature‐dependent photoluminescent properties were studied as a function of alloy composition for x=0–0.98. All the Er‐doped In1−xGaxP layers exhibited strong characteristic Er3+ intra‐4f‐shell photoluminescent emission at 0.801 eV which was independent of the alloy composition. A thermal quenching of the Er3+‐related emission was observed and depended on the alloy composition. For In1−xGaxP alloys with x≳0.2, Er3+‐related luminescence is observed at 295 K.Keywords
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