Fabrication of very high resistivity Si with low loss and cross talk
- 1 September 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (9), 442-444
- https://doi.org/10.1109/55.863105
Abstract
We have used proton and As/sup +/ implantation to increase the resistivity of conventional Si (10 /spl Omega/-cm) and Si-on-quartz substrates, respectively. A high resistivity of 1.6 M/spl Omega/-cm is measured that is close to intrinsic Si and semi-insulating GaAs. Very low loss and cross coupling of 6.3 dB/cm and -79 dB/cm (10 /spl mu/m gap) at 20 GHz are measured on these samples, respectively. The very high resistivity and improved rf performance are due to the extremely fast /spl sim/1 ps carrier lifetime stable even after a 400/spl deg/C annealing for 1 h. Little negative effect on gate oxide integrity is also observed as evidenced by the comparable stress-induced leakage current and charge-to-breakdown for 30 /spl Aring/ oxides.Keywords
This publication has 15 references indexed in Scilit:
- 30 GHz tuned MEMS switchesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Silicon as a microwave substratePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Formimg local semi-insulating regions on silicon wafers by proton bombardmentPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 2-GHz Si power MOSFET technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Design and characterization of multilayer spiral transmission-line balunsIEEE Transactions on Microwave Theory and Techniques, 1999
- The effect of native oxide on thin gate oxide integrityIEEE Electron Device Letters, 1998
- Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substratesIEEE Transactions on Microwave Theory and Techniques, 1997
- A SOI-RF-CMOS technology on high resistivity SIMOX substrates for microwave applications to 5 GHzIEEE Transactions on Electron Devices, 1997
- Picosecond photoresponse of carriers in Si ion-implanted SiApplied Physics Letters, 1996
- Carrier lifetime versus ion-implantation dose in silicon on sapphireApplied Physics Letters, 1987