Behavior of threshold current and polarization of stimulated emission of GaAs injection lasers under uniaxial stress
- 1 February 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 9 (2), 338-341
- https://doi.org/10.1109/jqe.1973.1077461
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Effects of External Uniaxial Stress on the Optical Properties of Semiconductors and Semiconductor MicrostructuresPublished by Elsevier ,1998
- Effect of uniaxial pressure on the threshold current of double-heterostructure GaAs lasersApplied Physics Letters, 1972
- Reflectivity of mode at facet and oscillation mode in double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1972
- Mode Reflectivity and Waveguide Properties of Double-Heterostructure Injection LasersJournal of Applied Physics, 1971
- Piezo-Electroreflectance in Ge, GaAs, and SiPhysical Review B, 1968
- THE EFFECT OF UNIAXIAL STRAIN ON THE THRESHOLD CURRENT AND OUTPUT OF GaAs LASERSApplied Physics Letters, 1963