Sub-60-nm quasi-planar FinFETs fabricated using a simplified process

Abstract

N-channel double-gate metal-oxide-semiconductor field-effect transistor (MOSFET) FinFETs with gate and fin dimensions as small as 30 nm have been fabricated using a new, simplified process. Short channel effects are effectively suppressed when the Si fin width is less than two-thirds of the gate length. The drive current for typical devices is found to be above 500 μA/μm (or 1 mA/μm, depending on the definition of the width of the double-gate device) for V/sub g/-V _T =V/sub d/=1 V. The electrical gate oxide thickness in these devices is 21 /spl Aring/, determined from the first FinFET capacitance-versus-voltage characteristics obtained to date. These results indicate that the FinFET is a promising structure for the future manufacturing of integrated circuits with sub-60-nm feature size, and that double-gate MOSFETs can meet international technology roadmap for semiconductors performance specifications without aggressive scaling of the gate-oxide thickness.