New morphological types of CuSi precipitates in silicon and their electrical effects
- 16 August 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 78 (2), 527-538
- https://doi.org/10.1002/pssa.2210780219
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- The mechanism of repeated precipitation on dislocationsActa Metallurgica, 1974
- Precipitation of copper in siliconJournal of Applied Physics, 1973
- The dragging of precipitate particles by climbing dislocations in siliconJournal of Applied Physics, 1973
- Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid MaterialsJournal of Applied Physics, 1971
- Precipitation in High-Purity Silicon Single CrystalsJournal of Applied Physics, 1971