Sputtering Yields of Several Semiconducting Compounds under Argon Ion Bombardment
- 1 June 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (7), 2820-2822
- https://doi.org/10.1063/1.1782130
Abstract
Sputtering yields of single crystals of SiC, InSb, GaAs, GaP, CdS, and PbTe under argon ion bombardment have been measured. The energy of the argon ions, obtained from a magnetically confined argon arc, ranged from 75 to 600 eV. The sputtering yields were determined from target weight losses measured by an in situ quartz spring microbalance. Yields at 500‐eV argon ion energy ranged from 0.40 for SiC to 1.30 for PbTe.Keywords
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