Al metallization by ionized-cluster beam deposition and epitaxy
- 1 March 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 7-8, 900-905
- https://doi.org/10.1016/0168-583x(85)90491-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Ion–surface interactions during thin film depositionJournal of Vacuum Science & Technology A, 1984
- Vaporized-metal cluster formation and effect of kinetic energy of ionized clusters on film formationThin Solid Films, 1982
- Effect of Growth Temperature on Si MBE FilmJapanese Journal of Applied Physics, 1981
- Effect of texture and grain structure on electromigration in Al-0.5%Cu thin filmsThin Solid Films, 1981
- An evaluation of metal and semiconductor films formed by ionized-cluster beam depositionThin Solid Films, 1976
- Evolution and Current Status of Aluminum MetallizationJournal of the Electrochemical Society, 1976
- SLT Device Metallurgy and its Monolithic ExtensionIBM Journal of Research and Development, 1969
- Optical Constants and Reflectance and Transmittance of Evaporated Aluminum in the Visible and Ultraviolet*Journal of the Optical Society of America, 1961