Low-pressure MOCVD growth of ZnTe and observation of gas reaction
- 1 January 1990
- Vol. 41 (1-3), 715-717
- https://doi.org/10.1016/0042-207x(90)90460-g
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 11 references indexed in Scilit:
- ZnTe Growth and In Situ Gas Analyses in Low-Pressure MOVPEJapanese Journal of Applied Physics, 1990
- Photoluminescence of ZnTe homoepitaxial layers grown by metalorganic vapor-phase epitaxy at low pressureJournal of Applied Physics, 1989
- Growth and characterisation of ZnTe and ZnTeCdTe superlattices on GaAs substratesJournal of Crystal Growth, 1988
- Homoepitaxial growth of ZnTe by low-pressure metalorganic vapor phase epitaxyJournal of Applied Physics, 1988
- Intrinsic and extrinsic photoluminescence spectra of ZnTe films on GaAs deposited by molecular-beam and organo-metallic vapor-phase epitaxyJournal of Applied Physics, 1988
- Fabrication and photoluminescence properties of ZnTe and CdZnTe films by low pressure metalorganic chemical-vapour depositionJournal of Crystal Growth, 1988
- In-situ monitoring of chemical reactions in MOCVD growth of ZnSeJournal of Crystal Growth, 1986
- MOVPE growth and characteristics of CdTe on InSb substratesJournal of Crystal Growth, 1986
- The Growth and Characterization of HgTe Epitaxial Layers Made by Organometallic EpitaxyJournal of the Electrochemical Society, 1984
- Morphology of organometallic CVD grown GaAs epitaxial layersJournal of Crystal Growth, 1983