Electronic structure of oxygen vacancies in La2O3, Lu2O3 and LaLuO3
- 30 September 2009
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 86 (7-9), 1672-1675
- https://doi.org/10.1016/j.mee.2009.03.016
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Passivation of oxygen vacancy states and suppression of Fermi pinning in HfO2 by La additionApplied Physics Letters, 2009
- Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporationApplied Physics Letters, 2007
- Wide $V_{\rm fb}$ and $V_{\rm th}$ Tunability for Metal-Gated MOS Devices With HfLaO Gate DielectricsIEEE Electron Device Letters, 2007
- Defect states in the high-dielectric-constant gate oxide LaAlO3Applied Physics Letters, 2006
- Band structure of functional oxides by screened exchange and the weighted density approximationPhysica Status Solidi (b), 2006
- Dielectric Properties of High-Oxides: Theory and Experiment forPhysical Review Letters, 2005
- Energy-band diagram of metal/Lu2O3/silicon structuresApplied Physics Letters, 2004
- Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-KMISFET with p+poly-Si Gates -A Theoretical ApproachJapanese Journal of Applied Physics, 2004
- Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectricsIEEE Electron Device Letters, 2003
- Band offsets of wide-band-gap oxides and implications for future electronic devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000