Photoluminescence of undoped In0.53Ga0.47As/InP grown by the vapor phase epitaxy technique
- 1 July 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (7), 5136-5139
- https://doi.org/10.1063/1.331349
Abstract
Optical properties of undoped, n‐type In0.53Ga0.47As/InP grown by the vapor phase epitaxy technique are presented, including the temperature dependence of the band gap which can be described by the empirical relation Eg = 0.821−2.30×10−4 T−2.39×10−7 T2 eV. The photoluminescence emission intensity is found to decrease with increasing temperature. This temperature dependence of the intensity can be characterized by a nonradiative recombination process with an activation energy of Ea≃27 meV.Keywords
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