Atomic layer epitaxy
- 1 August 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 216 (1), 84-89
- https://doi.org/10.1016/0040-6090(92)90874-b
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Doping in Molecular Layer EpitaxyJournal of the Electrochemical Society, 1989
- Atomic layer epitaxyMaterials Science Reports, 1989
- New approach to the atomic layer epitaxy of GaAs using a fast gas streamApplied Physics Letters, 1988
- Photoluminescence characteristics of AlGaAs-GaAs single quantum wells grown by migration-enhanced epitaxy at 300 °C substrate temperatureApplied Physics Letters, 1987
- Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxyApplied Physics Letters, 1986
- Self-limiting mechanism in the atomic layer epitaxy of GaAsApplied Physics Letters, 1986
- GaAs Atomic Layer Epitaxy by Hydride VPEJapanese Journal of Applied Physics, 1986
- Atomic Layer EpitaxyAnnual Review of Materials Science, 1985
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985