Electrical properties of hydrogenated diamond
- 9 April 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (15), 1454-1456
- https://doi.org/10.1063/1.102496
Abstract
Hydrogen passivation of deep traps in diamond is demonstrated. Current-voltage (I-V) characteristics of polycrystalline thin film and bulk diamond were studied before and after hydrogenation. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the I-V characteristics of the samples. The concentration of uncompensated traps was varied systematically by hydrogenation. The concentration of electrically active hydrogen was determined from the I-V data. It is shown that hydrogenation is an alternative to deep-level transient spectroscopy, suitable for characterization of traps in a wide-band-gap material like diamond.Keywords
This publication has 8 references indexed in Scilit:
- Hydrogen passivation of defects and impurities in GaAs and InPJournal of Electronic Materials, 1989
- Passivation of defects in polycrystalline superlattices and quantum well structuresApplied Physics Letters, 1989
- Hydrogen passivation of electrically active defects in diamondApplied Physics Letters, 1989
- Resistivity of chemical vapor deposited diamond filmsApplied Physics Letters, 1989
- The electrical properties of deep copper- and nickel-related centers in siliconJournal of Applied Physics, 1983
- Hydrogen passivation of copper-related defects in germaniumApplied Physics Letters, 1982
- Hydrogenation and dehydrogenation of amorphous and crystalline siliconApplied Physics Letters, 1978
- Investigation of defects and striations in as-grown Si crystals by SEM using Schottky diodesApplied Physics Letters, 1975