Laser annealing of ion implanted GaAs
- 1 January 1980
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 48 (1-4), 121-124
- https://doi.org/10.1080/00337578008209241
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Laser reordering of implanted amorphous layers in GaAsSolid-State Electronics, 1978
- Laser pulse energy dependence of annealing in ion implanted Si and GaAs semiconductorsPhysics Letters A, 1978
- Annealing of Te-implanted GaAs by ruby laser irradiationApplied Physics Letters, 1978
- A comparison of Sn-, Ge-, Se- and Te-ion-implanted GaAsJournal of Physics D: Applied Physics, 1977
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968