Short-wavelength (∼625 nm) room-temperature continuous laser operation of In0.5(AlxGa1−x)0.5P quantum well heterostructures
- 18 April 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (16), 1329-1331
- https://doi.org/10.1063/1.99149
Abstract
Data are presented demonstrating very‐short‐wavelength (625 nm) room‐temperature (300 K) continuous (cw) photopumped laser operation of In1−y(AlxGa1−x)yP‐In1−y (AlxGa1−x)yP quantum well heterostructures grown lattice matched (y≊0.5) on a GaAs substrate via metalorganic chemical vapor deposition. In addition, 300 K pulsed laser operation (Jth∼104 A/cm2, 625 nm) of diodes fabricated from the same crystal is described.Keywords
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