Effects of electron irradiation of metal-nitride-semiconductor insulated gate field-effect transistors
- 1 May 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 54 (5), 784-785
- https://doi.org/10.1109/proc.1966.4848
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A new, insulated-gate transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1966
- A new insulated-gate silicon transistorProceedings of the IEEE, 1966
- EFFECTS OF LOW-ENERGY ELECTRON IRRADIATION ON Si-INSULATED GATE FETsApplied Physics Letters, 1965
- Effects of electron irradiation on metal-oxide semiconductor transistorsProceedings of the IEEE, 1965
- Effect of electron irradiation on N-channel MOS transistorsProceedings of the IEEE, 1965
- Space-Charge Model for Surface Potential Shifts in Silicon Passivated with Thin Insulating LayersIBM Journal of Research and Development, 1964