Electrical properties of sputtered A1N films and interface analyses by Auger electron spectroscopy
- 1 January 1981
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 75 (2), 167-176
- https://doi.org/10.1016/0040-6090(81)90453-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Mechanical Stress and Electrical Properties of MNOS Devices as a Function of the Nitride Deposition TemperatureJournal of the Electrochemical Society, 1978
- A study of the charging and dissociation of SiO2 Surfaces by AESSurface Science, 1977
- Optical properties of aluminium nitride prepared by chemical and plasmachemical vapour depositionPhysica Status Solidi (a), 1977
- Secondary electron emission from aluminiumSurface Science, 1976
- The Preparation and Properties of Aluminum Nitride FilmsJournal of the Electrochemical Society, 1975
- Some properties of chemically vapor deposited films of AlxOyNz on siliconJournal of Electronic Materials, 1975
- Preparation and electrical properties of Al-AlN-Si structuresPhysica Status Solidi (a), 1972
- Contaminants on chemically etched silicon surfaces: LEED-Auger methodSurface Science, 1970
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967