Polycrystalline-silicon thin-film transistors on glass
- 15 November 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (10), 936-937
- https://doi.org/10.1063/1.91766
Abstract
Thin‐film transistors are fabricated on polycrystalline silicon on transparent glass using molecular beam deposition at low temperatures. It is found that the transistor characteristics and stability of this device, together with the low‐temperature processes utilized, afford potential application to flat display panels.Keywords
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