Pressure dependence of photoluminescence in InxGa1 − xAs/AlyGa1 − yAs strained quantum wells with different widths
- 1 April 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (4-6), 885-888
- https://doi.org/10.1016/0038-1101(94)90319-0
Abstract
No abstract availableKeywords
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