Low dislocation density GaSb single crystals grown by LEC technique
- 31 December 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 56 (1), 39-44
- https://doi.org/10.1016/0022-0248(82)90010-0
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- A novel encapsulant material for LEC growth of GaSbJournal of Crystal Growth, 1980
- Liquid-Phase Epitaxy of Ga1-yInyAsxSb1-xQuaternary Alloys on GaSbJapanese Journal of Applied Physics, 1979
- Stacking fault energy and ionicity of cubic III–V compoundsPhysica Status Solidi (a), 1978
- Devices and materials for 4 μm-band fibre-optical communicationIEE Journal on Solidstate and Electron Devices, 1978
- Liquid phase epitaxial growth of InGaAsSb on (111)B InAsJournal of Crystal Growth, 1976
- Growth of NaClKCl mixed crystals from the meltMaterials Research Bulletin, 1967
- Anisotropic Segregation in InSbJournal of the Electrochemical Society, 1961
- Some defects in crystals grown from the melt - I. Defects caused by thermal stressesProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1956