Hot-carrier-induced degradation in p-MOSFETs under AC stress
- 1 May 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (5), 211-213
- https://doi.org/10.1109/55.693
Abstract
Lifetimes under AC stress are calculated with a quasistatic model using parameters extracted from DC stress data. For inverter-like waveforms, the measurement data show reasonable agreement with the simulation results. For waveforms with turnoff transient occurring in the presence of high drain voltage, more degradation than the model predicts is found if the transient is short (<or=10 ns) and gate voltage is high.Keywords
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