Bipolar resistive switching in polycrystalline TiO2 films
- 12 March 2007
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 90 (11), 113501
- https://doi.org/10.1063/1.2712777
Abstract
Bipolar resistive switching was found in thin polycrystalline films formed by the thermal oxidation of sputtered Ti films. With a Ag top electrode, film, and Pt bottom electrode, bistable resistive switching with a low operating voltage and a good uniformity was observed repeatedly without an initial electrical “forming” process. This switching phenomenon might be described as the formation and rupture of a filamentary conductive path consisting of a chain of Ag atoms. The temperature dependence of the switching voltage is discussed in terms of interstitial ionic diffusion of Ag in the matrix.
Keywords
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