Resonant spin-flip Raman scattering on donor and acceptor states in ZnTe

Abstract
By using a tunable laser various resonant aspects of spin-flip Raman scattering for electrons and holes bound to donor and acceptor states in ZnTe have been studied. g values as well as diamagnetic coefficients for these states have been determined with high accuracy. The acceptor g factors and their anisotropy are interpreted on the basis of the calculations of Cho et al. The resonance effect of the spin-flip scattering is discussed in relationship to the bound exciton luminescence. Multiple spin-flip scattering observed for donor electrons is explained with a model involving exchange coupling between the donor and the donor-bound exciton.