Pressure stability in reactive magnetron sputtering
- 1 March 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 158 (1), 141-149
- https://doi.org/10.1016/0040-6090(88)90310-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Modeling of reactive sputtering of compound materialsJournal of Vacuum Science & Technology A, 1987
- Optical properties of tungsten oxide films as a function of their stoichiometry as determined by LIMA and XPSVacuum, 1987
- Titanium carbide thin films obtained by reactive magnetron sputteringVacuum, 1986
- Hysteresis effect in reactive sputtering: a problem of system stabilityJournal of Physics D: Applied Physics, 1986
- The influence of substrate temperature and sputtering gas atmosphere on the electrical properties of reactively sputtered indium tin oxide filmsThin Solid Films, 1986
- Reactive high rate d.c. sputtering of oxidesThin Solid Films, 1984
- Reactive ion plating of TiO2Vacuum, 1984
- Reactive high rate D.C. sputtering: Deposition rate, stoichiometry and features of TiOx and TiNx films with respect to the target modeThin Solid Films, 1984
- New Techniques For Roll Coating Of Optical Thin FilmPublished by SPIE-Intl Soc Optical Eng ,1982