Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate
- 1 May 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (3), 1300-1304
- https://doi.org/10.1116/1.590005
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- GaN Thin Film Growth on LiGaO 2 Substrate with a Multi-Domain StructureJapanese Journal of Applied Physics, 1997
- Analysis of In0.07Ga0.93As layers on GaAs compliant substrates by double crystal x-ray diffractionApplied Physics Letters, 1997
- MBE growth and properties of GaN on GaN/SiC substratesSolid-State Electronics, 1997
- LiGaO 2 Single Crystals for a Substrate of Hexagonal GaN Thin FilmsJapanese Journal of Applied Physics, 1997
- Photoluminescence from GaN films grown by MBE on an substrateSemiconductor Science and Technology, 1997
- Wet and Dry Etching of LiGaO2 and LiAlO2Journal of the Electrochemical Society, 1996
- Comparative infrared lattice vibration study of LiGaO2 and LiInO2 (II). Interatomic force constantsCrystal Research and Technology, 1990
- Thermal expansion of LiGaO2Journal of Materials Science Letters, 1987
- Heat capacity and thermodynamic properties of LiGaO2 from 180 to 700 KCrystal Research and Technology, 1987
- Piezoelectric, Elastic and Dielectric Properties of LiGaO2Japanese Journal of Applied Physics, 1972