Investigation of carrier heating and spectral hole burning in semiconductor amplifiers by highly nondegenerate four-wave mixing
- 9 May 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (19), 2492-2494
- https://doi.org/10.1063/1.111576
Abstract
A highly nondegenerate (up to 1 THz) four‐wave mixing experiment is performed in a bulk semiconductoramplifier. The simultaneous presence of carrier heating and spectral hole burning shows up in a four‐wave mixing experiment. A simple physical picture is given that explains the relative weight of the two saturation mechanisms in active semiconductor devices.Keywords
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