Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm
- 1 February 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (3), 288-290
- https://doi.org/10.1063/1.94727
Abstract
Current injection Ga0.47In0.53As/InP multiquantum well heterostructure lasers operating at 1.53 μm have been successfully prepared by molecular beam epitaxy. These lasers consist of four ∼70 Å Ga0.47In0.53As wells and three ∼150 Å InP barriers. The threshold current density is 2.7 kA/cm2. In the temperature range of 10–75 °C, the threshold‐temperature dependence can be described closely by a single temperature dependence coefficient T0. The measured T0 is 45 K. No significant improvement in T0 is observed in these multiquantum well lasers over conventional double‐heterostructure lasers operating also at 1.5 μm.Keywords
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