AlxGa1−xAs-GaAs vertical-cavity surface-emitting laser grown on Si substrate
- 19 February 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (8), 740-742
- https://doi.org/10.1063/1.102698
Abstract
Data are presented demonstrating room‐temperature operation of AlxGa1−xAs‐GaAs vertical‐cavity surface‐emitting lasers grown on Si substrates. The device structures are grown using molecular beam epitaxy and a grown‐in quarter‐wave AlAs‐GaAs stack is used as the n‐side reflector and a nonalloyed Ag dot used as the p‐side reflector/contact. Pulsed threshold currents of ∼125 mA are obtained for a 15‐μm‐diam device.Keywords
This publication has 22 references indexed in Scilit:
- Combined effect of strained-layer superlattice and annealing in defects reduction in GaAs grown on Si substratesApplied Physics Letters, 1989
- Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laserApplied Physics Letters, 1989
- High-power vertical-cavity surface-emitting AlGaAs/GaAs diode lasersApplied Physics Letters, 1989
- Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) under Room Temperature CW ConditionsJapanese Journal of Applied Physics, 1989
- Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructuresJournal of Applied Physics, 1988
- Degradation of GaAs lasers and light-emitting diodes on silicon substratesMaterials Science and Engineering B, 1988
- Stability of 300 K continuous operation of p-n AlxGa1−xAs-GaAs quantum well lasers grown on SiApplied Physics Letters, 1987
- Microstructural characterization of patterned gallium arsenide grown on 〈001〉 silicon substratesApplied Physics Letters, 1987
- Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor depositionJournal of Electronic Materials, 1987
- Room-temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrateApplied Physics Letters, 1985