Internal photoemission and band discontinuities at Ga0.47In0.53As-InP heterojunctions
- 10 April 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (15), 1457-1459
- https://doi.org/10.1063/1.100696
Abstract
Internal photoemission has been observed in the spectral response of specially designed Ga0.47In0.53As‐InP p+N− heterojunction photodiodes. Power‐law fits to the internal photoemission as a function of photon energy allow precise determination of threshold energies from which the conduction‐band discontinuity is easily and accurately deduced to be ΔEc=203±15 meV at room temperature. These measurements have been performed at temperatures from 135 to 297 K. The temperature dependence of ΔEc is described by ∂(ΔEc)/∂T=−0.2±0.1 meV/K.Keywords
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