Evidence for intrinsic interfacial strain in lattice-matched InxGa1−xAs/InP heterostructures

Abstract

A fully dynamical high-resolution x-ray-diffraction study of a nominally lattice-matched ${\mathrm{In}}_{0.53}$ ${\mathrm{Ga}}_{0.47}$As/InP heterostructure has been carried out. This study reveals the presence of net intrinsic interfacial strains that are produced by the difference in bond lengths on each side of the interfaces.