Tantalum silicide films deposited by dc sputtering
- 1 January 1981
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 10 (1), 59-93
- https://doi.org/10.1007/bf02654902
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Characterization of Thin Film Molybdenum Silicide OxideJournal of the Electrochemical Society, 1980
- Preparation of Molybdenum Silicide Films by Reactive SputteringJournal of the Electrochemical Society, 1980
- An interface — marker technique applied to the study of metal silicide growthNuclear Instruments and Methods, 1980
- Oxidation mechanisms in WSi2 thin filmsApplied Physics Letters, 1978
- Measurement of stresses in thin films on single crystalline substratesPhysica Status Solidi (a), 1978
- dc Bias-Sputtered Aluminum FilmsJournal of Vacuum Science and Technology, 1973
- Silicon gate technologySolid-State Electronics, 1970
- Metal-nitride-oxide-silicon field-effect transistors, with self-aligned gatesSolid-State Electronics, 1968
- Role of Hydrogen in the Sputtering of Nickel–Chromium FilmsJournal of Vacuum Science and Technology, 1967
- Thin Films Deposited by Bias SputteringJournal of Applied Physics, 1965