Annealing of point defects in quenched NiA1
- 1 March 1975
- journal article
- other
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 31 (3), 739-742
- https://doi.org/10.1080/14786437508226554
Abstract
The annealing behaviour of quenched-in electrical resistivity” has been investigated in NiAl, completed by electron transmission microscopy. Isochronal treatments show one single recovery stage, explained as point-defect agglomeration to voids.Keywords
This publication has 6 references indexed in Scilit:
- Oxidation-induced defects in NiAlPhilosophical Magazine, 1973
- Constitutional and Thermal Structure Defects in NiGaJournal of Applied Physics, 1968
- Thermal vacancies in NiAlActa Metallurgica, 1967
- Quenched-In Defects in CsCl-Type Alloys. IJournal of Applied Physics, 1963
- Point defects in goldPhysica Status Solidi (b), 1962
- Untersuchung atomarer Fehlstellen in verformtem und abgeschrecktem SilberPhysica Status Solidi (b), 1962