Electron-Beam-Induced Cl2 Etching of GaAs
- 1 March 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (3A), L515
- https://doi.org/10.1143/jjap.28.l515
Abstract
Electron-beam (EB)-induced Cl2 etching of GaAs is performed for the first time. Etching occurs only in the area exposed to both the Cl2 molecules and the EB. The etching rate is equal to that of a Cl2 gas phase etching. The morphologies of the etched surfaces are slightly rough, but the photoluminescence intensity of the processed sample does not change as compared with that of the unprocessed sample. The etching characteristics predict that surface adsorbates act as a mask for a gas phase etching and that the EB plays an important part in patterning of the adsorbate mask.Keywords
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