Blue Electroluminescence from ZnSe p-n Junction Light-Emitting Diodes

Abstract
Pure blue-light emission has been obtained from homoepitaxial ZnSe p-n junction light-emitting diodes (LEDs). Homoepitaxy is made on ZnSe substrates dry-etched by a BCl3 plasma. High-quality p-n junctions consists; of N-doped p-type ZnSe formed by active-nitrogen doping and Cl-doped n-type ZnSe using ZnCl2 as a dopant source. Current-voltage characteristics of the LEDs exhibited good rectification properties. The peak energy of blue electroluminescence from the LEDs was 2.67 eV with a narrow full width at half-maximum of 49 meV.

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