Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
- 30 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4), 317-320
- https://doi.org/10.1016/s0167-9317(97)00072-5
Abstract
No abstract availableKeywords
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