RF sputtering of AlxIn1−xN thin films
- 16 November 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 68 (1), K55-K57
- https://doi.org/10.1002/pssa.2210680154
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Growth and properties of AlxGa1–xN epitaxial layersPhysica Status Solidi (a), 1978
- Growth and properties of GaxAl1-xN compoundsJournal of Physics C: Solid State Physics, 1978
- Synthesis of III–V semiconductor nitrides by reactive cathodic sputteringThin Solid Films, 1976
- Growth of In1−xGaxSb and In1−xAlxSb films by mulsti target R.F. sputteringThin Solid Films, 1976
- Preparation and optical properties of Ga1−xInxN thin filmsJournal of Applied Physics, 1975
- Electrical and Optical Properties of rf-Sputtered GaN and InNApplied Physics Letters, 1972
- Structural, Optical, and Dielectric Properties of Reactively Sputtered Films in the System AlN–BNJournal of Vacuum Science and Technology, 1969
- Dielectric Properties of Reactively Sputtered Films of Aluminum NitrideJournal of Vacuum Science and Technology, 1969