Influence of N, O and C impurities in a-Si:H
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 391-394
- https://doi.org/10.1016/s0022-3093(05)80138-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Effect of Charged Defects on Properties of Amorphous Si-Based AlloysJapanese Journal of Applied Physics, 1990
- Evidence for a stretched-exponential description of optical defect generation in hydrogenated amorphous siliconApplied Physics Letters, 1990
- Photo-created defects in a-Si:H as elucidated by ESR, LESR and CPMJournal of Non-Crystalline Solids, 1989
- Nature of Localized States in Hydrogenated Si–Based Amorphous Semiconductor Films Elucidated from LESR and CPMJapanese Journal of Applied Physics, 1989